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  • SPD02N80C3ATMA1

SPD02N80C3ATMA1

Trans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPD02N80C3ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 834
  • Description: Trans MOSFET N-CH 800V 2A 3-Pin TO-252 T/R (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Current Rating 2A
Power Dissipation-Max 42W Tc
Power Dissipation 42W
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 800V
Input Capacitance 290pF
Drain to Source Resistance 2.4Ohm
Rds On Max 2.7 Ω
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet