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  • SPD04N50C3ATMA1

SPD04N50C3ATMA1

Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-252 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPD04N50C3ATMA1
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 876
  • Description: Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) TO-252 T/R (Kg)

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Details

Tags

Parameters
Drain to Source Resistance 850mOhm
Rds On Max 950 mΩ
RoHS Status ROHS3 Compliant
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PG-TO252-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series CoolMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 560V
Technology MOSFET (Metal Oxide)
Current Rating 4.5A
Number of Elements 1
Power Dissipation-Max 50W Tc
Power Dissipation 50W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 500V
Input Capacitance 470pF
See Relate Datesheet