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SPD04N60S5

SPD04N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPD04N60S5
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 292
  • Description: SPD04N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Continuous Drain Current (ID) 4.5A
JEDEC-95 Code TO-252AA
Number of Pins 3
Gate to Source Voltage (Vgs) 20V
Transistor Element Material SILICON
Drain-source On Resistance-Max 0.95Ohm
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Drain to Source Breakdown Voltage 600V
Published 2005
Pulsed Drain Current-Max (IDM) 9A
Radiation Hardening No
Series CoolMOS™
RoHS Status RoHS Compliant
JESD-609 Code e3
Lead Free Lead Free
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 4.5A
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Turn On Delay Time 55 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 22.9nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Contact Plating Tin
Fall Time (Typ) 15 ns
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Turn-Off Delay Time 60 ns
Surface Mount YES
See Relate Datesheet