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SPD100N03S2L-04

MOSFET N-CH 30V 100A DPAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPD100N03S2L-04
  • Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
  • Datasheet: PDF
  • Stock: 154
  • Description: MOSFET N-CH 30V 100A DPAK (Kg)

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Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3320pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 89.7nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain-source On Resistance-Max 0.0063Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 325 mJ
RoHS Status Non-RoHS Compliant
See Relate Datesheet