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SPI15N65C3XKSA1

MOSFET N-CH 650V 15A TO262-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPI15N65C3XKSA1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 777
  • Description: MOSFET N-CH 650V 15A TO262-3 (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Supplier Device Package PG-TO262-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 156W Tc
Element Configuration Single
Power Dissipation 156W
Turn On Delay Time 32 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id 3.9V @ 675μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 14ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain to Source Breakdown Voltage 650V
Input Capacitance 1.6nF
Drain to Source Resistance 280mOhm
Rds On Max 280 mΩ
Nominal Vgs 3 V
Height 9.45mm
Length 10.2mm
Width 4.5mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet