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SPP07N60S5

SPP07N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPP07N60S5
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 763
  • Description: SPP07N60S5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series CoolMOS™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 7.3A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 83W
Case Connection DRAIN
Turn On Delay Time 120 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 4.6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 350μA
Halogen Free Not Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 20 ns
Turn-Off Delay Time 170 ns
Continuous Drain Current (ID) 7.3A
Threshold Voltage 4.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 14.6A
Height 9.45mm
Length 10.36mm
Width 4.57mm
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet