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  • SPP20N60CFDXKSA1

SPP20N60CFDXKSA1

MOSFET N-CH 650V 20.7A TO-220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPP20N60CFDXKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 639
  • Description: MOSFET N-CH 650V 20.7A TO-220 (Kg)

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Details

Tags

Parameters
Factory Lead Time 9 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package PG-TO220-3-1
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Series CoolMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Current Rating 20.7A
Power Dissipation-Max 208W Tc
Element Configuration Single
Power Dissipation 208W
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 220mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 20.7A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Input Capacitance 2.4nF
Drain to Source Resistance 190mOhm
Rds On Max 220 mΩ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet