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  • SPS01N60C3

SPS01N60C3

MOSFET N-CH 650V 800MA TO251-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPS01N60C3
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 637
  • Description: MOSFET N-CH 650V 800MA TO251-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pin Count 3
Avalanche Energy Rating (Eas) 20 mJ
Qualification Status Not Qualified
Nominal Vgs 3 V
Number of Elements 1
REACH SVHC Unknown
Power Dissipation-Max 11W Tc
RoHS Status RoHS Compliant
Element Configuration Single
Lead Free Lead Free
Operating Mode ENHANCEMENT MODE
Power Dissipation 11W
Turn On Delay Time 30 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 100pF @ 25V
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 800mA Tc
Package / Case TO-251-3 Stub Leads, IPak
Surface Mount NO
Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V
Rise Time 25ns
Number of Pins 3
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Operating Temperature -55°C~150°C TJ
Vgs (Max) ±20V
Packaging Tube
Published 2005
Fall Time (Typ) 30 ns
Turn-Off Delay Time 55 ns
Series CoolMOS™
Pbfree Code yes
Continuous Drain Current (ID) 800mA
Part Status Obsolete
JEDEC-95 Code TO-251AA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 30V
Number of Terminations 3
Termination Through Hole
Drain Current-Max (Abs) (ID) 0.8A
ECCN Code EAR99
Drain-source On Resistance-Max 6Ohm
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Drain to Source Breakdown Voltage 650V
Technology MOSFET (Metal Oxide)
Pulsed Drain Current-Max (IDM) 1.6A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Dual Supply Voltage 650V
See Relate Datesheet