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  • SPS02N60C3

SPS02N60C3

MOSFET N-CH 650V 1.8A TO251-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPS02N60C3
  • Package: TO-251-3 Stub Leads, IPak
  • Datasheet: PDF
  • Stock: 408
  • Description: MOSFET N-CH 650V 1.8A TO251-3 (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Turn On Delay Time 6 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Rise Time 3ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 1.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 3Ohm
Drain to Source Breakdown Voltage 650V
Pulsed Drain Current-Max (IDM) 5.4A
Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 50 mJ
Nominal Vgs 3 V
REACH SVHC Unknown
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet