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SPU03N60C3BKMA1

MOSFET N-CH 650V 3.2A TO-251


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPU03N60C3BKMA1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 109
  • Description: MOSFET N-CH 650V 3.2A TO-251 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Pin Count 3
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
JESD-30 Code R-PSIP-T3
Transistor Element Material SILICON
Qualification Status Not Qualified
Operating Temperature -55°C~150°C TJ
Packaging Tube
Number of Elements 1
Published 2003
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 38W Tc
Series CoolMOS™
Operating Mode ENHANCEMENT MODE
JESD-609 Code e3
FET Type N-Channel
Pbfree Code no
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.9V @ 135μA
Part Status Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Number of Terminations 3
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Terminal Finish Tin (Sn)
Drain to Source Voltage (Vdss) 650V
Additional Feature AVALANCHE RATED
Drive Voltage (Max Rds On,Min Rds On) 10V
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3.2A
Pulsed Drain Current-Max (IDM) 9.6A
Terminal Position SINGLE
DS Breakdown Voltage-Min 600V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Avalanche Energy Rating (Eas) 100 mJ
RoHS Status ROHS3 Compliant
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
See Relate Datesheet