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SPW20N60CFDFKSA1

MOSFET N-CH 650V 20.7A TO-247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPW20N60CFDFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 874
  • Description: MOSFET N-CH 650V 20.7A TO-247 (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED
Voltage - Rated DC 650V
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Current Rating 20.7A
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 208W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 13.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.7A Tc
Gate Charge (Qg) (Max) @ Vgs 124nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.4 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 20.7A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.22Ohm
Pulsed Drain Current-Max (IDM) 52A
Avalanche Energy Rating (Eas) 690 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet