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SPW35N60CFDFKSA1

MOSFET N-CH 600V 34.1A TO-247


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SPW35N60CFDFKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 422
  • Description: MOSFET N-CH 600V 34.1A TO-247 (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, HIGH VOLTAGE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 313W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 118m Ω @ 21.6A, 10V
Vgs(th) (Max) @ Id 5V @ 1.9mA
Input Capacitance (Ciss) (Max) @ Vds 5060pF @ 25V
Current - Continuous Drain (Id) @ 25°C 34.1A Tc
Gate Charge (Qg) (Max) @ Vgs 212nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-247AA
Drain Current-Max (Abs) (ID) 34.1A
Drain-source On Resistance-Max 0.118Ohm
Pulsed Drain Current-Max (IDM) 85A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 1300 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet