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SQ4005EY-T1_GE3

Automotive P-Channel 12 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQ4005EY-T1_GE3
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 662
  • Description: Automotive P-Channel 12 V (D-S) 175 °C MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 6W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 6W
Turn On Delay Time 19 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 22m Ω@ 13.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 6V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±8V
Turn-Off Delay Time 73 ns
Continuous Drain Current (ID) -15A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -12V
Max Junction Temperature (Tj) 175°C
Height 1.75mm
RoHS Status RoHS Compliant
See Relate Datesheet