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SQD50N10-8M9L_GE3

MOSFET N-CHAN 100V TO252


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQD50N10-8M9L_GE3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 752
  • Description: MOSFET N-CHAN 100V TO252 (Kg)

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Means of Payment

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RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Fall Time (Typ) 120 ns
Turn-Off Delay Time 95 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 2V
Height 2.38mm
Length 6.22mm
Width 6.73mm
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 136W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.9m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
See Relate Datesheet