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  • SQJ402EP-T1_GE3

SQJ402EP-T1_GE3

VISHAY SQJ402EP-T1-GE3 MOSFET Transistor, N Channel, 32 A, 100 V, 0.009 ohm, 10 V, 2 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ402EP-T1_GE3
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 393
  • Description: VISHAY SQJ402EP-T1-GE3 MOSFET Transistor, N Channel, 32 A, 100 V, 0.009 ohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 32A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
Height 1.07mm
Length 4.9mm
Width 4.37mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G4
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 83W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2289pF @ 40V
Current - Continuous Drain (Id) @ 25°C 32A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
See Relate Datesheet