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  • SQJ407EP-T1_GE3

SQJ407EP-T1_GE3

VISHAY - SQJ407EP-T1_GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0036 ohm, PowerPAK SO, Surface Mount


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ407EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 784
  • Description: VISHAY - SQJ407EP-T1_GE3 - Power MOSFET, P Channel, 30 V, 60 A, 0.0036 ohm, PowerPAK SO, Surface Mount (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 23 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 72 ns
Continuous Drain Current (ID) -60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage -30V
Avalanche Energy Rating (Eas) 84 mJ
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status RoHS Compliant
See Relate Datesheet