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  • SQJ463EP-T1_GE3

SQJ463EP-T1_GE3

MOSFET P-CH 40V 30A


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ463EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 105
  • Description: MOSFET P-CH 40V 30A (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Input Capacitance 5.875nF
Drain to Source Resistance 10mOhm
Rds On Max 10 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Voltage 40V
Power Dissipation-Max 83W Tc
Element Configuration Single
Current 30A
Power Dissipation 83W
Turn On Delay Time 21 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 10mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5875pF @ 20V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 51 ns
Turn-Off Delay Time 121 ns
Continuous Drain Current (ID) -30A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -40V
See Relate Datesheet