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  • SQJ886EP-T1_GE3

SQJ886EP-T1_GE3

VISHAY SILICONIX SQJ886EP-T1-GE3 MOSFET, N-CH, 40V, 60A, PPAKSO8L


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJ886EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 680
  • Description: VISHAY SILICONIX SQJ886EP-T1-GE3 MOSFET, N-CH, 40V, 60A, PPAKSO8L (Kg)

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The following are some common countries' logistic time.
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Details

Tags

Parameters
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 55W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 15.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2922pF @ 20V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 17ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0045Ohm
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 64 mJ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
See Relate Datesheet