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  • SQJA64EP-T1_GE3

SQJA64EP-T1_GE3

VISHAY - SQJA64EP-T1_GE3 - Power MOSFET, N Channel, 60 V, 15 A, 0.0259 ohm, PowerPAK SO, Surface Mount


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJA64EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 835
  • Description: VISHAY - SQJA64EP-T1_GE3 - Power MOSFET, N Channel, 60 V, 15 A, 0.0259 ohm, PowerPAK SO, Surface Mount (Kg)

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Details

Tags

Parameters
Height 1.267mm
RoHS Status ROHS3 Compliant
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Power Dissipation 45W
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 25.9mOhm
See Relate Datesheet