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SQJA94EP-T1_GE3

MOSFET N-CH 80V 46A POWERPAKSO-8


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJA94EP-T1_GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 573
  • Description: MOSFET N-CH 80V 46A POWERPAKSO-8 (Kg)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
JESD-30 Code R-PSSO-G4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 55W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 46A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 46A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Avalanche Energy Rating (Eas) 36 mJ
Max Junction Temperature (Tj) 175°C
Height 1.267mm
RoHS Status ROHS3 Compliant
See Relate Datesheet