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  • SQJQ100E-T1_GE3

SQJQ100E-T1_GE3

Automotive N-Channel 40 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQJQ100E-T1_GE3
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 809
  • Description: Automotive N-Channel 40 V (D-S) 175 °C MOSFET (Kg)

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Details

Tags

Parameters
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PowerPAK® 8 x 8
Manufacturer Package Identifier C14-0891-SINGLE
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 150W Tc
Power Dissipation 150W
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 52 ns
Continuous Drain Current (ID) 200A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 900μOhm
Height 2.03mm
RoHS Status ROHS3 Compliant
See Relate Datesheet