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  • SQM120N06-3M5L_GE3

SQM120N06-3M5L_GE3

VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQM120N06-3M5L_GE3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 145
  • Description: VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5m Ω @ 29A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 330nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 83 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 480A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 500 mJ
Height 4.826mm
Length 10.41mm
Width 9.652mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet