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  • SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

Automotive N-Channel 40 V (D-S) 175 °C MOSFET


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQM50N04-4M1_GE3
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 800
  • Description: Automotive N-Channel 40 V (D-S) 175 °C MOSFET (Kg)

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Details

Tags

Parameters
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Turn On Delay Time 12 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6715pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 50A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Input Capacitance 6.715nF
Drain to Source Resistance 4.1mOhm
Rds On Max 4.1 mΩ
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263 (D2Pak)
Weight 1.946308g
See Relate Datesheet