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  • SQP90142E_GE3

SQP90142E_GE3

MOSFET N-CH 200V 78.5A TO220AB


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQP90142E_GE3
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 130
  • Description: MOSFET N-CH 200V 78.5A TO220AB (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 250W Tc
Power Dissipation 250W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 78.5A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 78.5A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 12.7mOhm
Height 19.31mm
RoHS Status RoHS Compliant
See Relate Datesheet