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SQS850EN-T1_GE3

MOSFET N-Channel 60V AEC-Q101 Qualified


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQS850EN-T1_GE3
  • Package: PowerPAK® 1212-8
  • Datasheet: PDF
  • Stock: 828
  • Description: MOSFET N-Channel 60V AEC-Q101 Qualified (Kg)

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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 40
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 33W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 21.5m Ω @ 6.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2021pF @ 30V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0215Ohm
Pulsed Drain Current-Max (IDM) 48A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 26 mJ
RoHS Status Non-RoHS Compliant
See Relate Datesheet