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  • SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

MOSFET N-CH 60V 120A TO262-3


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SQV120N06-4M7L_GE3
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 891
  • Description: MOSFET N-CH 60V 120A TO262-3 (Kg)

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSIP-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 250W
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0047Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 300A
Avalanche Energy Rating (Eas) 320 mJ
Max Junction Temperature (Tj) 175°C
Height 14.86mm
RoHS Status RoHS Compliant
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet