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SS8050DBU

SS8050DBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SS8050DBU
  • Package: TO-226-3, TO-92-3 (TO-226AA)
  • Datasheet: PDF
  • Stock: 425
  • Description: SS8050DBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gain Bandwidth Product 100MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage 25V
Transition Frequency 190MHz
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
hFE Min 85
Height 4.58mm
Length 4.58mm
Width 3.86mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 6 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Weight 179mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 1W
Terminal Position BOTTOM
Current Rating 1.5A
Frequency 100MHz
Base Part Number SS8050
Number of Elements 1
Element Configuration Single
Power Dissipation 1W
Output Power 2W
Transistor Application AMPLIFIER
See Relate Datesheet