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  • SSU1N50BTU

SSU1N50BTU

Trans MOSFET N-CH 520V 1.3A 3-Pin(3+Tab) IPAK Rail


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-SSU1N50BTU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 705
  • Description: Trans MOSFET N-CH 520V 1.3A 3-Pin(3+Tab) IPAK Rail (Kg)

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FedEx International, 5-7 business days.

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Details

Tags

Parameters
Lifecycle Status ACTIVE, NOT REC (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta 26W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3 Ω @ 650mA, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 340pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.3A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 520V
Pulsed Drain Current-Max (IDM) 5A
Avalanche Energy Rating (Eas) 100 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet