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  • STD1HN60K3

STD1HN60K3

MOSFET N-CH 600V 1.2A DPAK


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STD1HN60K3
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 873
  • Description: MOSFET N-CH 600V 1.2A DPAK (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 2
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 8Ohm
Technology MOSFET (Metal Oxide)
Base Part Number STD1HN
Number of Elements 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Power Dissipation 27W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8 Ω @ 600mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 50V
Current - Continuous Drain (Id) @ 25°C 1.2A Tc
Gate Charge (Qg) (Max) @ Vgs 9.5nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 31 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 1.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet