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  • STD25NF20

STD25NF20

Automotive-grade N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STD25NF20
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 997
  • Description: Automotive-grade N-channel 200 V, 0.10 Ohm typ., 18 A StripFET Power MOSFET in DPAK package (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Cut Tape (CT)
Series Automotive, AEC-Q101, STripFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Base Part Number STD25N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 110W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 125m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 940pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 30ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 72A
Max Junction Temperature (Tj) 175°C
Height 2.63mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet