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STD845DN40

Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat)


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STD845DN40
  • Package: 8-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 577
  • Description: Bipolar Transistors - BJT Dual NPN High Volt Low Vce(sat) (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Other Transistors
Max Power Dissipation 3W
Base Part Number STD845
Pin Count 8
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power - Max 3W
Transistor Application SWITCHING
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 12 @ 2A 5V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 500mV @ 1A, 4A
Collector Emitter Breakdown Voltage 400V
Collector Emitter Saturation Voltage 500mV
Collector Base Voltage (VCBO) 700V
hFE Min 10
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet