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  • STD9N65M2

STD9N65M2

STMICROELECTRONICS STD9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STD9N65M2
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 972
  • Description: STMICROELECTRONICS STD9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series MDmesh™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STD9N
Number of Channels 1
Power Dissipation-Max 60W Tc
Turn On Delay Time 7.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 6.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 22.5 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 650V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet