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  • STF15NM60ND

STF15NM60ND

STMICROELECTRONICS STF15NM60ND Power MOSFET, N Channel, 14 A, 600 V, 0.27 ohm, 10 V, 4 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF15NM60ND
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 548
  • Description: STMICROELECTRONICS STF15NM60ND Power MOSFET, N Channel, 14 A, 600 V, 0.27 ohm, 10 V, 4 V (Kg)

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Details

Tags

Parameters
Fall Time (Typ) 28 ns
Turn-Off Delay Time 47 ns
Continuous Drain Current (ID) 14A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.299Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 56A
Height 16.4mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series FDmesh™ II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF15
Pin Count 3
Number of Elements 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Case Connection ISOLATED
Turn On Delay Time 17 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 299m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
Current - Continuous Drain (Id) @ 25°C 14A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
See Relate Datesheet