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  • STF18NM80

STF18NM80

STMICROELECTRONICS STF18NM80 Power MOSFET, N Channel, 17 A, 800 V, 0.25 ohm, 10 V, 4 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF18NM80
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 562
  • Description: STMICROELECTRONICS STF18NM80 Power MOSFET, N Channel, 17 A, 800 V, 0.25 ohm, 10 V, 4 V (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Gate to Source Voltage (Vgs) 30V
Number of Terminations 3
Drain-source On Resistance-Max 0.295Ohm
ECCN Code EAR99
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 68A
Avalanche Energy Rating (Eas) 600 mJ
Terminal Finish Matte Tin (Sn) - annealed
Height 16.4mm
Subcategory FET General Purpose Power
Length 10.4mm
Technology MOSFET (Metal Oxide)
Width 4.6mm
Terminal Position SINGLE
Radiation Hardening No
Base Part Number STF18
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pin Count 3
Lead Free Lead Free
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40W
Case Connection ISOLATED
Factory Lead Time 16 Weeks
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Mount Through Hole
Rds On (Max) @ Id, Vgs 295m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V
Mounting Type Through Hole
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Package / Case TO-220-3 Full Pack
Rise Time 28ns
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
Transistor Element Material SILICON
Vgs (Max) ±30V
Operating Temperature 150°C TJ
Fall Time (Typ) 50 ns
Packaging Tube
Turn-Off Delay Time 96 ns
Series MDmesh™
Continuous Drain Current (ID) 17A
JESD-609 Code e3
Threshold Voltage 4V
Part Status Active
JEDEC-95 Code TO-220AB
See Relate Datesheet