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STF26N60M2

STF26N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF26N60M2
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 810
  • Description: STF26N60M2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series MDmesh™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STF26
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.165Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 250 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet