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  • STF6N65M2

STF6N65M2

STMICROELECTRONICS STF6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF6N65M2
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 109
  • Description: STMICROELECTRONICS STF6N65M2 Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V (Kg)

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Details

Tags

Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STF6N
Number of Channels 1
Power Dissipation-Max 20W Tc
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.35 Ω @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 226pF @ 100V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Gate Charge (Qg) (Max) @ Vgs 9.8nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 650V
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Drive Voltage (Max Rds On,Min Rds On) 10V
Mount Through Hole
Vgs (Max) ±25V
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Fall Time (Typ) 20 ns
Weight 329.988449mg
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 6.5 ns
Continuous Drain Current (ID) 4A
Packaging Tube
Threshold Voltage 3V
Series MDmesh™
Part Status Active
Gate to Source Voltage (Vgs) 25V
REACH SVHC No SVHC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Resistance 1.2Ohm
Technology MOSFET (Metal Oxide)
See Relate Datesheet