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  • STF7NM60N

STF7NM60N

STF7NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF7NM60N
  • Package: TO-220-5 Full Pack
  • Datasheet: PDF
  • Stock: 882
  • Description: STF7NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 5A
Threshold Voltage 3V
Factory Lead Time 16 Weeks
Mount Through Hole
JEDEC-95 Code TO-220AB
Mounting Type Through Hole
Gate to Source Voltage (Vgs) 25V
Package / Case TO-220-5 Full Pack
Drain Current-Max (Abs) (ID) 5A
Drain to Source Breakdown Voltage 600V
Number of Pins 3
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 20A
Operating Temperature 150°C TJ
Height 16.4mm
Packaging Tube
Length 10.4mm
Width 4.6mm
Series MDmesh™ II
Part Status Active
Radiation Hardening No
REACH SVHC No SVHC
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status ROHS3 Compliant
Number of Terminations 3
Lead Free Lead Free
ECCN Code EAR99
Resistance 900MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STF7N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 20W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 20W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 50V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 10ns
See Relate Datesheet