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  • STF9NM60N

STF9NM60N

MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STF9NM60N
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 241
  • Description: MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO (Kg)

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Details

Tags

Parameters
Resistance 745MOhm
Radiation Hardening No
Terminal Finish Matte Tin (Sn) - annealed
REACH SVHC No SVHC
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Base Part Number STF9
Pin Count 3
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection ISOLATED
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 745m Ω @ 3.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 452pF @ 50V
Current - Continuous Drain (Id) @ 25°C 6.5A Tc
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Factory Lead Time 16 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Vgs (Max) ±25V
Mount Through Hole
Fall Time (Typ) 26.7 ns
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Turn-Off Delay Time 52.5 ns
Number of Pins 3
Continuous Drain Current (ID) 6.5A
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Threshold Voltage 3V
Packaging Tube
JEDEC-95 Code TO-220AB
Series MDmesh™ II
Gate to Source Voltage (Vgs) 25V
Drain Current-Max (Abs) (ID) 9A
JESD-609 Code e3
Part Status Active
Drain to Source Breakdown Voltage 600V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pulsed Drain Current-Max (IDM) 26A
Number of Terminations 3
Height 16.4mm
ECCN Code EAR99
Length 10.4mm
Width 4.6mm
See Relate Datesheet