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STGB18N40LZ-1

STGB18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGB18N40LZ-1
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 696
  • Description: STGB18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGB18
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Power - Max 150W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 30A
Collector Emitter Breakdown Voltage 420V
Turn On Time 4450 ns
Test Condition 300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff) 22200 ns
Gate Charge 29nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 650ns/13.5μs
Gate-Emitter Voltage-Max 16V
RoHS Status ROHS3 Compliant
See Relate Datesheet