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STGB3NB60KDT4

STGB3NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGB3NB60KDT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 593
  • Description: STGB3NB60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 50W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB3
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 50W
Input Type Standard
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 10A
Reverse Recovery Time 45ns
Continuous Drain Current (ID) 6A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.8V
Turn On Time 19 ns
Test Condition 480V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Turn Off Time-Nom (toff) 220 ns
Gate Charge 14nC
Current - Collector Pulsed (Icm) 24A
Td (on/off) @ 25°C 14ns/33ns
Switching Energy 30μJ (on), 58μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet