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  • STGB3NC120HDT4

STGB3NC120HDT4

IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGB3NC120HDT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 179
  • Description: IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.000002g
Transistor Element Material SILICON
Manufacturer Package Identifier D2Pak
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Max Power Dissipation 75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 75W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 15 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 118 ns
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 14A
Reverse Recovery Time 51 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.3V
Max Breakdown Voltage 1.2kV
Turn On Time 18.5 ns
Test Condition 800V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 14A
Turn Off Time-Nom (toff) 680 ns
Gate Charge 24nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 15ns/118ns
Switching Energy 236μJ (on), 290μJ (off)
Height 4.83mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet