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STGB7NB40LZT4

STGB7NB40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGB7NB40LZT4
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 352
  • Description: STGB7NB40LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 100W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGB7
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 70W
Case Connection COLLECTOR
Input Type Standard
Power - Max 100W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 14A
Collector Emitter Breakdown Voltage 430V
Collector Emitter Saturation Voltage 1.5V
Turn On Time 5400 ns
Test Condition 300V, 46 Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.9V @ 5V, 14A
Turn Off Time-Nom (toff) 8000 ns
Gate Charge 22nC
Td (on/off) @ 25°C 900ns/4.4μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
RoHS Status ROHS3 Compliant
See Relate Datesheet