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STGD18N40LZ-1

STGD18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGD18N40LZ-1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 470
  • Description: STGD18N40LZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature VOLTAGE CLAMPING
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD18
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Logic
Power - Max 125W
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 360V
Max Collector Current 25A
Collector Emitter Breakdown Voltage 420V
Max Breakdown Voltage 420V
Turn On Time 4450 ns
Test Condition 300V, 10A, 5V
Vce(on) (Max) @ Vge, Ic 1.7V @ 4.5V, 10A
Turn Off Time-Nom (toff) 22200 ns
Gate Charge 29nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 650ns/13.5μs
Gate-Emitter Voltage-Max 16V
RoHS Status ROHS3 Compliant
See Relate Datesheet