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STGD5NB120SZ-1

STGD5NB120SZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGD5NB120SZ-1
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 152
  • Description: STGD5NB120SZ-1 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STGD5
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 690 ns
Power - Max 75W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 12.1 μs
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 10A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Max Breakdown Voltage 1.2kV
Turn On Time 850 ns
Test Condition 960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Turn Off Time-Nom (toff) 14100 ns
Td (on/off) @ 25°C 690ns/12.1μs
Switching Energy 2.59mJ (on), 9mJ (off)
See Relate Datesheet