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STGF7NB60SL

STMICROELECTRONICS STGF7NB60SL IGBT Single Transistor, 15 A, 1.6 V, 25 W, 600 V, TO-220FP, 3 Pins


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGF7NB60SL
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 471
  • Description: STMICROELECTRONICS STGF7NB60SL IGBT Single Transistor, 15 A, 1.6 V, 25 W, 600 V, TO-220FP, 3 Pins (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 25W
Base Part Number STGF7
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 1.1 μs
Transistor Application POWER CONTROL
Rise Time 250ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.2V
Turn On Time 1350 ns
Test Condition 480V, 7A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic 1.6V @ 4.5V, 7A
Continuous Collector Current 15A
Turn Off Time-Nom (toff) 8100 ns
Gate Charge 16nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 1.1μs/5.2μs
Switching Energy 4.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 2.4V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet