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  • STGP10NB60S

STGP10NB60S

STGP10NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP10NB60S
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 526
  • Description: STGP10NB60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Terminal Finish Matte Tin (Sn) - annealed
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Current Rating 10A
Base Part Number STGP10
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 80W
Input Type Standard
Turn On Delay Time 7 μs
Transistor Application POWER CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 29A
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.7V
Turn On Time 1160 ns
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Continuous Collector Current 10A
Turn Off Time-Nom (toff) 3100 ns
Gate Charge 33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
See Relate Datesheet