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STGP10NB60SD

STGP10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP10NB60SD
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 792
  • Description: STGP10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 80W
Current Rating 20A
Base Part Number STGP10
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 3.5W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 700 ns
Power - Max 80W
Transistor Application POWER CONTROL
Rise Time 460ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 1.2 μs
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 29A
Reverse Recovery Time 37 ns
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Drain to Source Breakdown Voltage 600V
Turn On Time 1160 ns
Test Condition 480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.75V @ 15V, 10A
Turn Off Time-Nom (toff) 3100 ns
Gate Charge 33nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 700ns/1.2μs
Switching Energy 600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 9.15mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet