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STGP12NB60HD

STGP12NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP12NB60HD
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 965
  • Description: STGP12NB60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGP12
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Input Type Standard
Power - Max 125W
Transistor Application MOTOR CONTROL
Drain to Source Voltage (Vdss) 600V
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 30A
Reverse Recovery Time 80 ns
Continuous Drain Current (ID) 18A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 51 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 12A
Turn Off Time-Nom (toff) 295 ns
Gate Charge 68nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C 5ns/91ns
Switching Energy 210μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 125W
Peak Reflow Temperature (Cel) NOT SPECIFIED
See Relate Datesheet