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STGP19NC60SD

STGP19NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP19NC60SD
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 672
  • Description: STGP19NC60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 130W
Base Part Number STGP19
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17.5 ns
Power - Max 130W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 175 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Reverse Recovery Time 31 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 23.5 ns
Test Condition 480V, 12A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 12A
Turn Off Time-Nom (toff) 535 ns
Gate Charge 54.5nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 17.5ns/175ns
Switching Energy 135μJ (on), 815μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet