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STGP30NC60S

STGP30NC60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi


  • Manufacturer: STMicroelectronics
  • Origchip NO: 761-STGP30NC60S
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 926
  • Description: STGP30NC60S datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 175W
Base Part Number STGP30
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 175W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Turn On Time 30 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 20A
Turn Off Time-Nom (toff) 555 ns
Gate Charge 96nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 21.5ns/180ns
Switching Energy 300μJ (on), 1.28mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet